Systems and methods for maintaining power amplifier performance

ABSTRACT

Systems and methods for maintaining power amplifier performance are provided. A system includes a bias supply that generates a bias voltage, and at least one primary power amplifier (PA) that receives the bias voltage and a primary radio frequency (RF) input. The at least one primary PA amplifies the primary RF input based on the bias voltage. The system includes an auxiliary PA that is connected in parallel with the at least one primary PA and receives the bias voltage and an auxiliary RF input, which is a scaled version of the primary RF input. The auxiliary PA amplifies the auxiliary RF input based on the bias voltage. The system includes a detector that measures an output voltage associated with the amplified auxiliary RF input, and a comparator that compares the measured output voltage to a reference voltage. The bias supply adjusts the bias voltage based on the comparison.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application claims the benefit of U.S. Provisional Patent Application Ser. No. 61/732,819, titled “Systems and Methods for Maintaining Power Amplifier Performance,” filed on Dec. 3, 2012, which is hereby incorporated by reference in its entirety for all purposes.

FIELD

The subject technology generally relates to power amplifiers and, in particular, relates to systems and methods for maintaining power amplifier performance.

BACKGROUND

A power amplifier may be used to increase the power of a signal. The degree of amplification of the signal may vary depending on the amount of voltage that the power amplifier is biased with. For example, a higher bias voltage may result in a greater amplification of the signal. However, the performance of the power amplifier may be degraded over time and/or repeated use. As a result, the power amplifier may not be able to increase the power of the signal to its intended degree.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide further understanding of the subject technology and are incorporated in and constitute a part of this specification, illustrate aspects of the subject technology and together with the description serve to explain the principles of the subject technology.

FIG. 1 illustrates an example of a transmission system, in accordance with various aspects of the subject technology.

FIG. 2 illustrates an example of a plurality of power amplifiers that can be combined together to generate a voltage swing that is substantially the same as a voltage swing that can be generated by a single larger power amplifier, in accordance with various aspects of the subject technology.

FIG. 3A illustrates an example of a cascode amplifier having two primary transistors, in accordance with various aspects of the subject technology.

FIG. 3B illustrates an example of a cascode amplifier having three primary transistors, in accordance with various aspects of the subject technology.

FIG. 4 is a block diagram illustrating components of a controller, in accordance with various aspects of the subject technology.

DETAILED DESCRIPTION

In the following detailed description, numerous specific details are set forth to provide a full understanding of the subject technology. It will be apparent, however, that the subject technology may be practiced without some of these specific details. In other instances, structures and techniques have not been shown in detail so as not to obscure the subject technology.

FIG. 1 illustrates an example of transmission system 100, in accordance with various aspects of the subject technology. In one or more implementations, transmission system 100 may be part of a communication device for facilitating the transmission of a signal to a target destination. According to certain aspects, transmission system 100 includes baseband processor 102 that generates the signal to be transmitted, mixer 104 that modulates the signal to generate a signal RF_(in) for transmission, power amplifier 106 that amplifies the signal RF_(in) to generate an output signal RF_(out), and antenna 108 that transmits the output signal RF_(out) to the target destination. According to certain aspects, the output signal RF_(out) may be a radio frequency (RF) signal having millimeter waves. In some aspects, the signal RF_(out) may be an RF signal having any suitable wavelength.

The performance of power amplifier 106 may become degraded over time and/or by repeated use (e.g., aging), thereby affecting its reliability. As a result, in order for power amplifier 106 to maintain its performance (e.g., in producing large voltage swings), the bias voltage of power amplifier 106 (e.g., its threshold voltage) may need to be increased. According to various aspects of the subject technology, transmission system 100 includes feedback module 116, which may provide a feedback mechanism to measure a power output P_(out) of the output signal RF_(out) to be transmitted, and to adjust the bias voltage provided to power amplifier 106 as needed in order to account for aging and/or for power amplifier 106 to generate the output signal RF_(out) at a desired power.

Feedback module 116 includes detector 110, comparator 112, and bias supply 114. Detector 110 includes logic, code, and/or circuitry for measuring the power output P_(out) of the output signal RF_(out) and for providing a corresponding output voltage V_(out) to comparator 112. For example, detector 110 may include a transmit signal strength indicator (TSSI) that measures the power output P_(out) and provides a corresponding output voltage V_(out) to comparator 112. Comparator 112 includes logic, code, and/or circuitry for comparing the output voltage V_(out) to a reference voltage V_(ref) and for determining a difference between the output voltage V_(out) and the reference voltage V_(ref). In some aspects, the reference voltage V_(ref) may be predetermined. In some aspects, the reference voltage V_(ref) may specify a voltage that the output signal RF_(out) should have in order for power amplifier 106 to maintain its level of performance. Bias supply 114 includes logic, code, and/or circuitry for adjusting the bias voltage V_(b) provided to power amplifier 106 based on the difference in voltage between the output voltage V_(out) and the reference voltage V_(ref). For example, if the output voltage V_(out) is less than the reference voltage V_(ref), then bias supply 114 may increase the bias voltage V_(b) provided to power amplifier 106 so that power amplifier 106 can generate the output signal RF_(out) such that its voltage substantially matches the reference voltage V_(ref).

Producing a large voltage swing using a single power amplifier may not always be feasible. In this regard, smaller power amplifiers (e.g., ones that produce smaller voltage swings) may be combined together to generate a voltage swing that is substantially the same as a voltage swing that can be generated by a single larger power amplifier. FIG. 2 illustrates an example of a plurality of power amplifiers 202 (e.g., power amplifiers 202 a, 202 b, 202 c, 202 d, 202 e, 202 f, 202 g, 202 h, 202 i, 202 j, 202 k, 202 l, 202 m, 202 n, 202 o, and 202 p) that can be combined together to generate a voltage swing that is substantially the same as a voltage swing that can be produced by a single larger power amplifier (e.g., power amplifier 106 in FIG. 1), in accordance with various aspects of the subject technology. In this regard, the plurality of power amplifiers 202 may be used instead of power amplifier 106 in FIG. 1 to amplify the signal RF_(in).

According to certain aspects, the signal RF_(in) may be divided among the plurality of power amplifiers 202 such that a set of power amplifiers 202 may each receive a portion of the signal RF_(in). In one or more implementations, power amplifiers 202 a, 202 b, 202 c, and 202 d, which are cascaded, may receive and amplify a portion of the signal RF_(in) (e.g., shown in FIG. 2 as RF_(in1)) to generate the signal RF_(out1). Similarly, power amplifiers 202 e, 202 f, 202 g, and 202 h, which are cascaded, may receive and amplify a portion of the signal RF_(in) (e.g., shown in FIG. 2 as RF_(in2)) to generate the signal RF_(out2). Power amplifiers 202 i, 202 j, 202 k, and 202 l, which are cascaded, may receive and amplify a portion of the signal RF_(in) (e.g., shown in FIG. 2 as RF_(in3)) to generate the signal RF_(out3). Furthermore, power amplifiers 202 m, 202 n, 202 o, and 202 p, which are cascaded, may receive and amplify a portion of the signal RF_(in) (e.g., shown in FIG. 2 as RF_(in4)) to generate the signal RF_(out4).

As shown in FIG. 2, the cascaded sets of power amplifiers 202 are connected in parallel with one another. For example, power amplifiers 202 a, 202 b, 202 c, and 202 d are connected in parallel with power amplifiers 202 e, 202 f, 202 g, and 202 h. Power amplifiers 202 i, 202 j, 202 k, and 202 l are connected in parallel with power amplifiers 202 m, 202 n, 202 o, and 202 p. According to certain aspects, summer 204 a may combine the signals RF_(out1) and RF_(out2) to generate the signal RF_(out5), while summer 204 b may combine the signals RF_(out3) and RF_(out4) to generate the signal RF_(out6). Summer 204 c may then combine the signals RF_(out5) and RF_(out6) to generate the output signal RF_(out) for transmission.

Aging may also affect the performance of the plurality of power amplifiers 202. In this regard, feedback module 116 in FIG. 1 may be used to measure a power output P_(out) of the output signal RF_(out) to be transmitted, and to adjust the bias voltage provided to the plurality of power amplifiers 202 as needed in order to account for aging and/or for the plurality of power amplifiers 202 to generate the output signal RF_(out) at a desired power. However, measuring the power output P_(out) of the output signal RF_(out) may sometimes affect the output signal RF_(out) itself, which may lead to inaccuracies in determining the amount of bias voltage to provide to the plurality of power amplifiers 202. In this regard, feedback module 218 provides a feedback mechanism to accurately adjust the bias voltage without necessarily affecting the output signal RF_(out). In this regard, feedback module 218 may be used instead of feedback module 116 in FIG. 1 to provide feedback for adjusting the bias voltage V_(b). In some aspects, feedback module 218 may be an alternative and simple implementation of feedback module 116 in FIG. 1.

Since aging may primarily affect the last stage of power amplifiers 202 (e.g., power amplifiers 202 d, 202 h, 202 l, and 202 p), feedback module 218 may be used to provide feedback for adjusting the bias voltage V_(b) provided to these power amplifiers. Feedback module 218 includes auxiliary power amplifier 208, auxiliary output load resistor 210, detector 212, comparator 214, and bias supply 216. Auxiliary power amplifier 208 is connected in parallel with the last stage of power amplifiers 202 and provides a mechanism to mimic the aging process of the last stage of power amplifiers 202 without contributing to the output signal RF_(out). Thus, the feedback mechanism provided by feedback module 218 may measure an auxiliary power output P_(aux-out) of auxiliary power amplifier 208, and may adjust the bias voltage V_(b) provided to the last stage of power amplifiers 202 as needed in order to account for aging and/or for the plurality of power amplifiers 202 to generate the output signal RF_(out) at a desired power.

According to certain aspects, auxiliary power amplifier 208 receives an auxiliary signal RF_(aux-in). According to certain aspects, the auxiliary signal RF_(aux-in) may be a scaled version of the signal RF_(in). In one or more implementations, the auxiliary signal RF_(aux-in) may scale the signal RF_(in) by a scale factor. In some aspects, the scale factor may be given by 1/N, where N is a total number of the plurality of power amplifiers 202 (e.g., in the last stage). For example, suppose N is 100 (e.g., there are a total of 100 power amplifiers in the last stage). Thus, a magnitude of the auxiliary signal RF_(aux-in) may be 1/100 of a magnitude of the signal RF_(in). In other words, if a current amplitude of the signal RF_(in) were 1 milliamp, a current amplitude of the auxiliary signal RF_(aux-in) may be 0.01 milliamps. In some aspects, auxiliary power amplifier 208 may be a scaled version of any one of the last stage of power amplifiers 202, which may contribute to the scaling of the auxiliary signal RF_(aux-in). For example, auxiliary power amplifier 208 may be a scaled version of any one of the last stage of power amplifiers 202 by an amplifier factor M (e.g., M may be less than 1). Thus, according to certain aspects, the scale factor may be given by M/N.

In some aspects, the auxiliary signal RF_(aux-in) may be scaled depending on an output load connected to auxiliary power amplifier 208. As shown in FIG. 2, auxiliary power amplifier 208 is coupled to auxiliary output load resistor 210. A value for auxiliary output load resistor 210 may be selected such that auxiliary power amplifier 208 receives the scaled version of the signal RF_(in) by the scale factor (e.g., the auxiliary signal RF_(aux-in)). In one or more implementations, auxiliary output load resistor 210 is a scaled version of an output load coupled to the last stage of power amplifiers 202 by an inverse of the scale factor (e.g., 100). For example, suppose the last stage of power amplifiers 202 encounters an output load of 10 ohms (e.g., the last stage of power amplifiers “sees” 10 ohms in the direction of the output signal RF_(out)). Thus, the auxiliary output load resistor 210 may have a value of 1000 ohms. Although the scale factor is described as being 1/100 and auxiliary output load resistor is described as being 1000 ohms, it is understood that the scale factor and/or auxiliary output load resistor may have any value that can scale the signal RF_(in) to generate the auxiliary signal RF_(aux-in).

Auxiliary power amplifier 208 may amplify the auxiliary signal F_(aux-in) to generate an auxiliary output signal RF_(aux-out). The voltage swing of the auxiliary output signal RF_(aux-out) may be substantially the same as the voltage swing of any of the outputs of the last stage of power amplifiers (e.g., the signal RF_(out1), the signal RF_(out2), the signal RF_(out3), and/or the signal RF_(out4)). Thus, the aging of auxiliary power amplifier 208 may be similar to the aging of any one of the last stage of power amplifiers. In this regard, feedback may be based on the auxiliary output signal RF_(aux-out) rather than the outputs of the last stage of power amplifiers, thereby minimizing the possibility of affecting the output signal RF_(out).

Detector 212 includes logic, code, and/or circuitry for measuring an auxiliary power output P_(aux-out) of the auxiliary signal RF_(aux-out) and for providing a corresponding auxiliary output voltage V_(aux-out) to comparator 214. For example, detector 212 may include a TSSI that measures the auxiliary power output P_(aux-out) and provides a corresponding auxiliary output voltage V_(aux-out) to comparator 214. Comparator 214 includes logic, code, and/or circuitry for comparing the auxiliary output voltage V_(aux-out) to an auxiliary reference voltage V_(aux-ref) and for determining a difference between the auxiliary output voltage V_(aux-out) and the auxiliary reference voltage V_(aux-ref). In some aspects, the auxiliary reference voltage V_(aux-ref) may be predetermined. In some aspects, the auxiliary reference voltage V_(aux-ref) may specify an amount of voltage (or a scaled version of voltage) that the output signal RF_(out) should have in order for the plurality of power amplifiers 202 to maintain their level of performance. Bias supply 216 includes logic, code, and/or circuitry for adjusting the bias voltage V_(b) provided to auxiliary power amplifier 208 and the last stage of power amplifiers 202 (e.g., power amplifiers 202 d, 202 h, 202 l, and 202 p) based on the difference in voltage between the auxiliary output voltage V_(aux-out) and the auxiliary reference voltage V_(aux-ref). For example, if the auxiliary output voltage V_(aux-out) is less than the auxiliary reference voltage V_(aux-ref), then bias supply 216 may increase the bias voltage V_(b) provided to auxiliary power amplifier 208 and the last stage of power amplifiers 202 so that the last stage of power amplifiers 202 can generate the output signal RF_(out) such that its voltage substantially matches the auxiliary reference voltage V_(aux-ref) (or a scaled version of the auxiliary reference voltage V_(aux-ref)).

According to various aspects of the subject technology, a power amplifier may be configured as a cascode amplifier, which may comprise two or more transistors. According to certain aspects, voltage swings (and therefore stress) may be evenly divided across multiple transistors so that not one particular transistor may be disproportionately stressed compared to other transistors, thereby enhancing the reliability of the cascode amplifier. Furthermore, feedback mechanisms may be provided to ensure that bias voltages provided to the transistors of the cascode amplifier may be adjusted in order for the cascode amplifier to generate a signal with a desired power.

FIG. 3A illustrates an example of cascode amplifier 300, in accordance with various aspects of the subject technology. Cascode amplifier 300 includes primary transistor 304 a having a gate terminal G, a drain terminal D, and a source terminal S. The source terminal S of primary transistor 304 a is coupled to ground. The gate terminal G of primary transistor 304 a receives the signal RF_(in) as well as a first bias voltage V_(b1). Capacitor 302 may be used to prevent direct current from being received at the gate terminal G of primary transistor 304 a. Resistor 306 may be used for biasing the gate terminal G of primary transistor 304 a.

Cascode amplifier 300 also includes primary transistor 304 b having a gate terminal G, a drain terminal D, and a source terminal S. The source terminal S of primary transistor 304 b is coupled to the drain terminal D of primary transistor 304 a. The gate terminal G of primary transistor 304 b receives a second bias voltage V_(b2). Resistor 308 may be used for biasing the gate terminal G of primary transistor 304 b. Although primary transistors 304 a and 304 b are described as being field-effect transistors, it is understood that cascode amplifier 300 can include any other transistors for amplifying a signal, such as bipolar junction transistors.

According to certain aspects, the signal RF_(in) is amplified at the drain terminal D of primary transistor 304 b based on the first bias voltage V_(b1) and the second bias voltage V_(b2), thereby generating the output signal RF_(out). According to certain aspects, the voltage swing of the output signal RF_(out) may be evenly divided across primary transistors 304 a and 304 b, thereby preventing either of these transistors from disproportionately experiencing more stress and more aging than the other transistor. In one or more implementations, if the voltage swing of the output signal RF_(out) is represented by 2×, then each of primary transistors 304 a and 304 b may encounter a voltage swing of 1×.

According to certain aspects, capacitors may be provided to distribute the voltage swing (and stress) evenly across primary transistors 304 a and 304 b. In one or more implementations, cascode amplifier 300 includes capacitor 310 coupled to the gate terminal G of primary transistor 304 b and ground. Cascode amplifier 300 also includes capacitor 312 coupled to the gate terminal G of primary transistor 304 b and the drain terminal D of primary transistor 304 b. A magnitude of capacitor 310 and a magnitude of capacitor 312 may be selected such that the voltage swing of the output signal RF_(out) at the drain terminal D of primary transistor 304 b is substantially evenly divided across primary transistors 304 a and 304 b.

According to various aspects of the subject technology, feedback mechanisms may be provided to ensure that the first bias voltage V_(b1) provided to primary transistor 304 a and the second bias voltage V_(b2) provided to primary transistor 304 b may be adjusted in order to account for aging and/or for cascode amplifier 300 to generate the output signal RF_(out) at a desired power. According to certain aspects, feedback module 314 may be used to detect a first power output P_(out1) of the output signal RF_(out), compare a corresponding first output voltage V_(out1) (not shown) to a first reference voltage, and adjust the first bias voltage V_(b1) based on the comparison. In one or more implementations, feedback module 314 may monitor for any change in performance of cascode amplifier 300 (e.g., monitor for a decrease in the first power output P_(out1)) and adjust the first bias voltage V_(b1) as needed in order to account for any degradation in performance (e.g., increase the first bias voltage V_(b1)). In some aspects, feedback module 314 may be feedback module 116 described with respect to FIG. 1. In some aspects, feedback module 314 may be feedback module 218 described with respect to FIG. 2 (e.g., the input to feedback module 314 would then be a scaled version of RF_(in) rather than the first power output P_(out1) of the output signal RF_(out)).

Feedback module 342 may also be used to detect a second output voltage V_(out2) at the source terminal S of primary transistor 304 b, compare the second output voltage V_(out2) to a second reference voltage V_(ref2), and adjust the second bias voltage V_(b2) based on the comparison. In one or more implementations, feedback module 342 may monitor for any change in voltage distribution across cascode amplifier 300 (e.g., monitor for a decrease in the second output voltage V_(out2)) and adjust the second bias voltage V_(b2) as needed in order to account for any deviation from a desired voltage distribution (e.g., increase the second bias voltage V_(b2)).

According to certain aspects, feedback module 342 includes detector 316, reference voltage module 344, comparator 318, and bias supply 320. Detector 316 includes logic, code, and/or circuitry for measuring the second output voltage V_(out2) and for providing this output voltage V_(out2) to comparator 318. In one or more implementations, detector 316 may obtain only a direct current (DC) component of the output at the source terminal S of primary transistor 304 b. In some aspects, reference voltage module 344 provides the second reference voltage V_(ref2) to comparator 318. Comparator 318 includes logic, code, and/or circuitry for comparing the second output voltage V_(out2) to the second reference voltage V_(ref2) and for determining a difference between the second output voltage V_(out2) and the second reference voltage V_(ref2). In some aspects, the second reference voltage V_(ref2) may specify a voltage that the second output voltage V_(out2) should be in order to maintain a desired voltage distribution across cascode amplifier 300. Bias supply 320 includes logic, code, and/or circuitry for adjusting the second bias voltage V_(b2) provided to primary transistor 304 b based on the difference in voltage between the second output voltage V_(out2) and the second reference voltage V_(ref2). For example, if the second output voltage V_(out2) is less than the second reference voltage V_(ref2), then bias supply 320 may increase the second bias voltage V_(b2) provided to primary transistor 304 b so that the second output voltage V_(out2) substantially matches the second reference voltage V_(ref2).

According to certain aspects, reference voltage module 344 provides a circuit that is similar to cascode amplifier 300 but does not receive the signal RF_(in) (and therefore does not age like cascode amplifier 300). Reference voltage module 344 includes auxiliary transistor 322 a (e.g., similar to primary transistor 304 a) having a gate terminal G, a drain terminal D, and a source terminal S. Similar to primary transistor 304 a, the gate terminal G of auxiliary transistor 322 a receives a first bias reference voltage V_(br1). However, unlike primary transistor 304 a, the gate terminal G of auxiliary transistor 322 a does not receive the signal RF_(in). Resistor 324 may be used for biasing the gate terminal G of auxiliary transistor 322 a. In some aspects, resistor 324 may substantially match resistor 306. Similar to primary transistor 304 a, the source terminal S of auxiliary transistor 322 a is coupled to ground.

Reference voltage module 344 also includes auxiliary transistor 322 b (e.g., similar to primary transistor 304 b) having a gate terminal G, a drain terminal D, and a source terminal S. Similar to primary transistor 304 b, the gate terminal G of auxiliary transistor 322 b receives a second bias reference voltage V_(br2). Resistor 326 may be used for biasing the gate terminal G of auxiliary transistor 322 b. In some aspects, resistor 326 may substantially match resistor 308. Furthermore, the source terminal S of auxiliary transistor 322 b is coupled to the drain terminal D of auxiliary transistor 322 a. The drain terminal D of auxiliary transistor 322 b receives a supply voltage V_(dd) that may be substantially equal to a voltage across cascode amplifier 300 (e.g., voltage of the output signal RF_(out)). Since reference voltage module 344 is similar to cascode amplifier 300 except that reference voltage module 344 does not receive the signal RF_(in) (and therefore does not age like cascode amplifier 300), the output voltage at the source terminal S of auxiliary transistor 322 b (e.g., the second reference voltage V_(ref2)) may be reflective of what the second output voltage V_(out2) would be if cascode amplifier 300 were not subjected to aging. In this regard, the second reference voltage V_(ref2) may be compared to the second output voltage V_(out2) to determine if the voltage distribution across primary transistors 304 a and 304 b has deviated from a desired voltage distribution.

According to certain aspects, the voltage distribution across auxiliary transistors 322 a and 322 b may be used as a reference that would enforce a similar voltage distribution across primary transistors 304 a and 304 b. For example, the second reference voltage V_(ref2) may be adjusted to be half of the supply voltage V_(dd) (e.g., the supply voltage V_(dd) is distributed evenly across auxiliary transistors 322 a and 322 b). Auxiliary transistors 322 a and 322 b may each be diode connected in order to achieve such a voltage distribution (e.g., the first bias reference voltage V_(br1) may be connected to the drain terminal D of auxiliary transistor 322 a and the second bias reference voltage V_(br2) may be connected to the drain terminal D of auxiliary transistor 322 b). Since the second output voltage V_(out2) is adjusted by the feedback mechanism of feedback module 342 to match the second reference voltage V_(ref2), the voltage distribution across primary transistors 304 a and 304 b may be similar to the voltage distribution across auxiliary transistors 322 a and 322 b (e.g., the second output voltage V_(out2) may be half of a voltage of the output signal RF_(out)).

Although reference voltage module 344 is described as providing a second reference voltage V_(ref2) that can be adjusted, reference voltage module 344 may also include any code, logic, and/or circuitry for providing a second reference voltage V_(ref2) that is predetermined. Furthermore, although cascode amplifier 300 is shown in FIG. 3A as having two primary transistors (e.g., primary transistors 304 a and 304 b) and reference voltage module 344 is shown as having two auxiliary transistors (e.g., auxiliary transistors 322 a and 322 b), it is understood that the feedback mechanisms described herein may be applied to any number of transistors in cascode amplifier 300 and/or in reference voltage module 344.

FIG. 3B illustrates an example of cascode amplifier 300 having a third primary transistor (e.g., primary transistor 304 c), in accordance with various aspects of the subject technology. Primary transistor 304 c includes a gate terminal G, a drain terminal D, and a source terminal S. The source terminal S of primary transistor 304 c is coupled to the drain terminal D of primary transistor 304 b. The gate terminal G of primary transistor 304 c receives a third bias voltage V_(b3). Resistor 334 may be used for biasing the gate terminal G of primary transistor 304 c.

According to certain aspects, the signal RF_(in) is amplified at the drain terminal D of primary transistor 304 c based on the first bias voltage V_(b1), the second bias voltage V_(b2), and the third bias voltage V_(b3), thereby generating the output signal RF_(out). According to certain aspects, the voltage swing of the output signal RF_(out) may be evenly divided across primary transistors 304 a, 304 b, and 304 c, thereby preventing any one of these transistors from disproportionately experiencing more stress and more aging than the other transistors. In one or more implementations, if the voltage swing of the output signal RF_(out) is represented by 3×, then each of primary transistors 304 a, 304 b, and 304 c may encounter a voltage swing of 1×.

In some aspects, capacitors may be provided to distribute the voltage swing (and stress) evenly across primary transistors 304 a, 304 b, and 304 c. In one or more implementations, cascode amplifier 300 includes capacitor 330 coupled to the gate terminal G of primary transistor 304 c and ground. Cascode amplifier 300 also includes capacitor 332 coupled to the gate terminal G of primary transistor 304 c and the drain terminal D of primary transistor 304 c. A magnitude of capacitor 310, a magnitude of capacitor 312, a magnitude of capacitor 330, and a magnitude of capacitor 332 may be selected such that the voltage swing of the output signal RF_(out) at the drain terminal D of primary transistor 304 c is substantially evenly divided across primary transistors 304 a, 304 b, and 304 c.

Feedback module 342 may also be used to detect a third output voltage V_(out3) at the source terminal S of primary transistor 304 c, compare the third output voltage V_(out3) to a third reference voltage V_(ref3), and adjust the third bias voltage V_(b3) based on the comparison. In one or more implementations, feedback module 342 may monitor for any change in voltage distribution across cascode amplifier 300 (e.g., monitor for a decrease in the third output voltage V_(out3) and/or the second output voltage V_(out2)) and adjust the third bias voltage V_(b3) and/or the second bias voltage V_(b2) as needed in order to account for any deviation from a desired voltage distribution (e.g., increase the third bias voltage V_(b3) and/or the second bias voltage V_(b2)).

According to certain aspects, feedback module 342 further includes detector 336, comparator 338, and bias supply 340. Detector 336 includes logic, code, and/or circuitry for measuring the third output voltage V_(out3) and for providing this output voltage V_(out3) to comparator 338. In one or more implementations, detector 338 may obtain only a DC component of the output at the source terminal S of primary transistor 304 c. In some aspects, reference voltage module 344 provides the third reference voltage V_(ref3) to comparator 338. Comparator 338 includes logic, code, and/or circuitry for comparing the third output voltage V_(out3) to the third reference voltage V_(ref3) and for determining a difference between the third output voltage V_(out3) and the third reference voltage V_(ref3). In some aspects, the third reference voltage V_(ref3) may specify a voltage that the third output voltage V_(out3) should be in order to maintain a desired voltage distribution across cascode amplifier 300. Bias supply 340 includes logic, code, and/or circuitry for adjusting the third bias voltage V_(b3) provided to primary transistor 304 c based on the difference in voltage between the third output voltage V_(out3) and the third reference voltage V_(ref3). For example, if the third output voltage V_(out3) is less than the third reference voltage V_(ref3), then bias supply 340 may increase the third bias voltage V_(b3) provided to primary transistor 304 c so that the third output voltage V_(out3) substantially matches the third reference voltage V_(ref3).

According to certain aspects, reference voltage module 344 further includes auxiliary transistor 322 c (e.g., similar to primary transistor 304 c) having a gate terminal G, a drain terminal D, and a source terminal S. Similar to primary transistor 304 c, the gate terminal G of auxiliary transistor 322 c receives a third bias reference voltage V_(br3). Resistor 328 may be used for biasing the gate terminal G of auxiliary transistor 322 c. In some aspects, resistor 328 may substantially match resistor 334. Furthermore, the source terminal S of auxiliary transistor 322 c is coupled to the drain terminal D of auxiliary transistor 322 b. The drain terminal D of auxiliary transistor 322 c receives a supply voltage V_(dd) that may be substantially equal to a voltage across cascode amplifier 300 (e.g., voltage of the output signal RF_(out)). Since reference voltage module 344 is similar to cascode amplifier 300 except that reference voltage module 344 does not receive the signal RF_(in) (and therefore does not age like cascode amplifier 300), the output voltage at the source terminal S of auxiliary transistor 322 c (e.g., the third reference voltage V_(ref3)) may be reflective of what the third output voltage V_(out3) would be if cascode amplifier 300 were not subjected to aging. In this regard, the third reference voltage V_(ref3) may be compared to the third output voltage V_(out3) to determine if the voltage distribution across primary transistors 304 a, 304 b, and 304 c has deviated from a desired voltage distribution.

According to certain aspects, the voltage distribution across auxiliary transistors 322 a, 322 b, and 322 c may be used as a reference that would enforce a similar voltage distribution across primary transistors 304 a, 304 b, and 304 c. For example, the third reference voltage V_(ref3) may be adjusted to be ⅔ of the supply voltage V_(dd) and the second reference voltage V_(ref2) may be adjusted to be ⅓ of the supply voltage V_(dd) (e.g., the supply voltage V_(dd) is distributed evenly across auxiliary transistors 322 a, 322 b, and 322 c). Auxiliary transistors 322 a, 322 b, and 322 c may each be diode connected in order to achieve such a voltage distribution (e.g., the first bias reference voltage V_(br1) may be connected to the drain terminal D of auxiliary transistor 322 a, the second bias reference voltage V_(br2) may be connected to the drain terminal D of auxiliary transistor 322 b, and the third bias reference voltage V_(br3) may be connected to the drain terminal D of auxiliary transistor 322 c). Since the second output voltage V_(out2) and the third output voltage V_(out3) are adjusted by the feedback mechanism of feedback module 342 to match the second reference voltage V_(ref2) and the third reference voltage V_(ref3), respectively, the voltage distribution across primary transistors 304 a, 304 b, and 304 c may be similar to the voltage distribution across auxiliary transistors 322 a, 322 b, and 322 c (e.g., the third output voltage V_(out3) may be ⅔ of a voltage of the output signal RF_(out) and the second output voltage V_(out2) may be ⅓ of a voltage of the output signal RF_(out)). Although reference voltage module 344 is described as providing a third reference voltage V_(ref3) that can be adjusted, reference voltage module 344 may also include any code, logic, and/or circuitry for providing a third reference voltage V_(ref3) that is predetermined.

FIG. 4 is a block diagram illustrating components of controller 400, in accordance with various aspects of the subject technology. In one or more implementations, controller 400 may be used to implement, at least in part, the feedback mechanisms described herein to maintain power amplifier performance (e.g., determining an output voltage, receiving a reference voltage (e.g., a predetermined reference voltage), storing the reference voltage, comparing the output voltage to the reference voltage, determining how much a bias voltage should be adjusted based on the comparison, etc.). Controller 400 comprises processor module 404, storage module 410, input/output (I/O) module 408, memory module 406, and bus 402. Bus 402 may be any suitable communication mechanism for communicating information. Processor module 404, storage module 410, I/O module 408, and memory module 406 are coupled with bus 402 for communicating information between any of the modules of controller 400 and/or information between any module of controller 400 and a device external to controller 400. For example, information communicated between any of the modules of controller 400 may include instructions and/or data. In some aspects, bus 402 may be a universal serial bus. In some aspects, bus 402 may provide Ethernet connectivity.

In some aspects, processor module 404 may comprise one or more processors, where each processor may perform different functions or execute different instructions and/or processes. For example, one or more processors may execute instructions for maintaining power amplifier performance, and one or more processors may execute instructions for input/output functions.

Memory module 406 may be random access memory (“RAM”) or other dynamic storage devices for storing information and instructions to be executed by processor module 404. Memory module 406 may also be used for storing temporary variables or other intermediate information during execution of instructions by processor 404. In some aspects, memory module 406 may comprise battery-powered static RAM, which stores information without requiring power to maintain the stored information. Storage module 410 may be a magnetic disk or optical disk and may also store information and instructions. In some aspects, storage module 410 may comprise hard disk storage or electronic memory storage (e.g., flash memory). In some aspects, memory module 406 and storage module 410 are both a machine-readable medium.

Controller 400 may be coupled via I/O module 408 to a user interface, which may allow a user to communicate information and select commands to controller 400 as well as receive information from controller 400. According to various aspects of the subject technology, methods described herein are executed by controller 400. Specifically, processor module 404 executes one or more sequences of instructions contained in memory module 406 and/or storage module 410. In one example, instructions may be read into memory module 406 from another machine-readable medium, such as storage module 410. In another example, instructions may be read directly into memory module 406 from I/O module 408, for example from an operator of system 100 via the user interface. Execution of the sequences of instructions contained in memory module 406 and/or storage module 410 causes processor module 404 to perform methods to maintain power amplifier performance. For example, a computational algorithm for maintaining power amplifier performance may be stored in memory module 406 and/or storage module 410 as one or more sequences of instructions. Information such as bias voltages, power outputs, output voltages, reference voltages, input signals, output signals, scale factors, and/or other information may be communicated from processor module 404 to memory module 406 and/or storage module 410 via bus 402 for storage. In some aspects, the information may be communicated from processor module 404, memory module 406, and/or storage module 410 to I/O module 408 via bus 402. The information may then be communicated from I/O module 408 to an operator of system 100 via the user interface.

One or more processors in a multi-processing arrangement may also be employed to execute the sequences of instructions contained in memory module 406 and/or storage module 410. In some aspects, hard-wired circuitry may be used in place of or in combination with software instructions to implement various aspects of the subject technology. Thus, aspects of the subject technology are not limited to any specific combination of hardware circuitry and software.

The term “machine-readable medium,” or “computer-readable medium,” as used herein, refers to any medium that participates in providing instructions to processor module 404 for execution. Such a medium may take many forms, including, but not limited to, non-volatile media and volatile media. Non-volatile media include, for example, optical or magnetic disks, such as storage module 410. Volatile media include dynamic memory, such as memory module 406. Common forms of machine-readable media or computer-readable media include, for example, floppy disk, a flexible disk, hard disk, magnetic tape, any other magnetic medium, a CD-ROM, DVD, any other optical medium, punch cards, paper tape, any other physical mediums with patterns of holes, a RAM, a PROM, an EPROM, a FLASH EPROM, any other memory chip or cartridge, or any other medium from which a processor can read.

It is understood that any specific order or hierarchy of blocks in the processes disclosed is an illustration of example approaches. Based upon design preferences, it is understood that the specific order or hierarchy of blocks in the processes may be rearranged, or that all illustrated blocks be performed. Any of the blocks may be performed simultaneously. In one or more implementations, multitasking and parallel processing may be advantageous. Moreover, the separation of various system components in the embodiments described above should not be understood as requiring such separation in all embodiments, and it should be understood that the described program components and systems can generally be integrated together in a single software product or packaged into multiple software products.

As used in this specification and any claims of this application, the terms “computer”, “server”, “processor”, and “memory” all refer to electronic or other technological devices. These terms exclude people or groups of people. For the purposes of the specification, the terms “display” or “displaying” means displaying on an electronic device.

As used herein, the phrase “at least one of” preceding a series of items, with the term “and” or “or” to separate any of the items, modifies the list as a whole, rather than each member of the list (i.e., each item). The phrase “at least one of” does not require selection of at least one of each item listed; rather, the phrase allows a meaning that includes at least one of any one of the items, and/or at least one of any combination of the items, and/or at least one of each of the items. By way of example, the phrases “at least one of A, B, and C” or “at least one of A, B, or C” each refer to only A, only B, or only C; any combination of A, B, and C; and/or at least one of each of A, B, and C.

The predicate words “configured to”, “operable to”, and “programmed to” do not imply any particular tangible or intangible modification of a subject, but, rather, are intended to be used interchangeably. In one or more implementations, a processor configured to analyze and control an operation or a component may also mean the processor being programmed to analyze and control the operation or the processor being operable to analyze and control the operation. Likewise, a processor configured to execute code can be construed as a processor programmed to execute code or operable to execute code.

A phrase such as “an aspect” does not imply that such aspect is essential to the subject technology or that such aspect applies to all configurations of the subject technology. A disclosure relating to an aspect may apply to all configurations, or one or more configurations. An aspect may provide one or more examples of the disclosure. A phrase such as an “aspect” may refer to one or more aspects and vice versa. A phrase such as an “embodiment” does not imply that such embodiment is essential to the subject technology or that such embodiment applies to all configurations of the subject technology. A disclosure relating to an embodiment may apply to all embodiments, or one or more embodiments. An embodiment may provide one or more examples of the disclosure. A phrase such an “embodiment” may refer to one or more embodiments and vice versa. A phrase such as a “configuration” does not imply that such configuration is essential to the subject technology or that such configuration applies to all configurations of the subject technology. A disclosure relating to a configuration may apply to all configurations, or one or more configurations. A configuration may provide one or more examples of the disclosure. A phrase such as a “configuration” may refer to one or more configurations and vice versa.

The word “exemplary” is used herein to mean “serving as an example, instance, or illustration.” Any embodiment described herein as “exemplary” or as an “example” is not necessarily to be construed as preferred or advantageous over other embodiments. Furthermore, to the extent that the term “include,” “have,” or the like is used in the description or the claims, such term is intended to be inclusive in a manner similar to the term “comprise” as “comprise” is interpreted when employed as a transitional word in a claim.

All structural and functional equivalents to the elements of the various aspects described throughout this disclosure that are known or later come to be known to those of ordinary skill in the art are expressly incorporated herein by reference and are intended to be encompassed by the claims. Moreover, nothing disclosed herein is intended to be dedicated to the public regardless of whether such disclosure is explicitly recited in the claims. No claim element is to be construed under the provisions of 35 U.S.C. §112, sixth paragraph, unless the element is expressly recited using the phrase “means for” or, in the case of a method claim, the element is recited using the phrase “step for.”

The previous description is provided to enable any person skilled in the art to practice the various aspects described herein. Various modifications to these aspects will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other aspects. Thus, the claims are not intended to be limited to the aspects shown herein, but are to be accorded the full scope consistent with the language claims, wherein reference to an element in the singular is not intended to mean “one and only one” unless specifically so stated, but rather “one or more.” Unless specifically stated otherwise, the term “some” refers to one or more. Pronouns in the masculine (e.g., his) include the feminine and neuter gender (e.g., her and its) and vice versa. Headings and subheadings, if any, are used for convenience only and do not limit the subject disclosure. 

What is claimed is:
 1. A system for maintaining power amplifier performance, the system comprising: a bias supply configured to generate a bias voltage; at least one primary power amplifier (PA) configured to receive the bias voltage and a primary radio frequency (RF) input, the at least one primary PA configured to amplify the primary RF input based on the bias voltage; an auxiliary PA connected in parallel with the at least one primary PA, the auxiliary PA being configured to receive the bias voltage and an auxiliary RF input, the auxiliary RF input being a scaled version of the primary RF input by a scale factor, the auxiliary PA being configured to amplify the auxiliary RF input based on the bias voltage; a detector configured to measure an output voltage associated with the amplified auxiliary RF input; and a comparator configured to compare the measured output voltage to a reference voltage, wherein the bias supply is configured to adjust the bias voltage provided to the auxiliary PA and the at least one primary PA based on the comparison of the measured output voltage to the reference voltage.
 2. The system of claim 1, wherein the reference voltage is predetermined.
 3. The system of claim 1, wherein a magnitude of the auxiliary RF input is less than a magnitude of the primary RF input.
 4. The system of claim 1, wherein the scale factor is given by: 1/N, where N is a total number of the at least one primary PA.
 5. The system of claim 1, wherein the auxiliary PA is a scaled version of the at least one primary PA by an amplifier factor M, and wherein the scale factor is given by M/N, wherein N is a total number of the at least one primary PA, and wherein M is less than
 1. 6. The system of claim 1, wherein the at least one primary PA is coupled to a primary output load, and wherein the auxiliary PA is coupled to an auxiliary output load greater than the primary output load.
 7. The system of claim 6, wherein the auxiliary output load is a scaled version of the primary output load by an inverse of the scale factor.
 8. A method for maintaining power amplifier performance, the method comprising: generating a bias voltage; receiving, by at least one primary power amplifier (PA), the bias voltage and a primary radio frequency (RF) input; amplifying, by the at least one primary PA, the primary RF input based on the bias voltage; receiving, by an auxiliary PA connected in parallel with the at least one primary PA, the bias voltage and an auxiliary RF input, the auxiliary RF input being a scaled version of the primary RF input by a scale factor; amplifying, by the auxiliary PA, the auxiliary RF input based on the bias voltage; measuring an output voltage associated with the amplified auxiliary RF input; comparing the measured output voltage to a reference voltage; and adjusting the bias voltage provided to the auxiliary PA and the at least one primary PA based on the comparison of the measured output voltage to the reference voltage.
 9. The method of claim 8, wherein the scale factor is given by: 1/N, where N is a total number of the at least one primary PA.
 10. The method of claim 8, wherein the bias voltage is adjusted such that the measured voltage is substantially the same as the reference voltage.
 11. A system for maintaining cascode amplifier performance, the system comprising: a cascode amplifier comprising: a first primary transistor having a first terminal, a second terminal, and a third terminal, the first terminal being configured to receive a first bias voltage and a primary radio frequency (RF) input; and a second primary transistor having a first terminal, a second terminal, and a third terminal, the first terminal of the second primary transistor being configured to receive a second bias voltage, the third terminal of the second primary transistor being coupled to the second terminal of the first primary transistor, wherein the cascode amplifier is configured to amplify the primary RF input based on the first bias voltage and the second bias voltage; a first feedback module configured to determine a change in a first output voltage of the amplified primary RF input, the first feedback module being configured to adjust the first bias voltage based on the change in the first output voltage; and a second feedback module configured to determine a change in voltage distribution across the first primary transistor and the secondary primary transistor, the second feedback module being configured to adjust the second bias voltage based on the change in the voltage distribution.
 12. The system of claim 11, wherein the primary RF input is amplified at the second terminal of the second primary transistor, and wherein the cascode amplifier further comprises: a first capacitor coupled to the first terminal of the second primary transistor and ground; and a second capacitor coupled to the first terminal of the second primary transistor and the second terminal of the second primary transistor, wherein a magnitude of the first capacitor and a magnitude of the second capacitor are selected such that the first output voltage of the amplified primary RF input at the second terminal of the second primary transistor is divided substantially evenly across the second primary transistor and the first primary transistor.
 13. The system of claim 11, wherein the first primary transistor comprises a field-effect transistor (FET), wherein the first terminal of the first primary transistor comprises a gate terminal, wherein the second terminal of the first primary transistor comprises a drain terminal, wherein the third terminal of the first primary transistor comprises a source terminal, wherein the second primary transistor comprises a FET, wherein the first terminal of the second primary transistor comprises a gate terminal, wherein the second terminal of the second primary transistor comprises a drain terminal, and wherein the third terminal of the second primary transistor comprises a source terminal.
 14. The system of claim 11, wherein the third terminal of the first primary transistor is coupled to ground.
 15. The system of claim 11, wherein the first feedback module comprises: an auxiliary power amplifier (PA) connected in parallel with the first primary transistor, the auxiliary PA being configured to receive the first bias voltage and an auxiliary RF input, the auxiliary RF input being a scaled version of the primary RF input by a scale factor, the auxiliary PA being configured to amplify the auxiliary RF input based on the first bias voltage, wherein an auxiliary output voltage of the amplified auxiliary RF input is substantially the same as the first output voltage of the amplified primary RF input; a first detector configured to measure the auxiliary output voltage; a first comparator configured to compare the measured auxiliary output voltage to a first reference voltage; and a first bias supply configured to adjust the first bias voltage provided to the first terminal of the first primary transistor based on the comparison of the measured auxiliary output voltage to the first reference voltage.
 16. The system of claim 11, wherein the second feedback module comprises: a first auxiliary transistor having a first terminal, a second terminal, and a third terminal, the first terminal of the first auxiliary transistor being configured to receive a first bias reference voltage, the third terminal of the first auxiliary transistor being coupled to ground; a second auxiliary transistor having a first terminal, a second terminal, and a third terminal, the first terminal of the second auxiliary transistor being configured to receive a second bias reference voltage, the third terminal of the second auxiliary transistor being coupled to the second terminal of the first auxiliary transistor, the second terminal of the second auxiliary transistor being configured to receive a supply voltage substantially equal to the first output voltage; a second detector configured to measure a second output voltage associated with the third terminal of the second primary transistor; a second comparator configured to compare the measured second output voltage to a second reference voltage associated with the third terminal of the second auxiliary transistor; and a second bias supply configured to adjust the second bias voltage provided to the first terminal of the second primary transistor based on the comparison of the measured second output voltage to the second reference voltage.
 17. The system of claim 11, wherein the cascode amplifier further comprises a third primary transistor having a first terminal, a second terminal, and a third terminal, the first terminal of the third primary transistor being configured to receive a third bias voltage, the third terminal of the third primary transistor being coupled to the second terminal of the second primary transistor, and wherein the cascode amplifier is configured to amplify the primary RF input based on the first bias voltage, the second bias voltage, and the third bias voltage.
 18. The system of claim 17, wherein the primary RF input is amplified at the second terminal of the third primary transistor, and wherein the cascode amplifier further comprises: a third capacitor coupled to the first terminal of the third primary transistor and ground; and a fourth capacitor coupled to the first terminal of the third primary transistor and the second terminal of the third primary transistor, wherein a magnitude of the third capacitor and a magnitude of the fourth capacitor are selected such that the first output voltage of the amplified primary RF input at the second terminal of the third primary transistor is divided substantially evenly across the third primary transistor, the second primary transistor, and the first primary transistor.
 19. The system of claim 17, wherein the second feedback module is configured to determine a change in voltage distribution across the first primary transistor, the secondary primary transistor, and the third primary transistor, and wherein the second feedback module is configured to adjust the third bias voltage based on the change in the voltage distribution across the first primary transistor, the secondary primary transistor, and the third primary transistor.
 20. The system of claim 19, wherein the second feedback module comprises: a first auxiliary transistor having a first terminal, a second terminal, and a third terminal, the first terminal of the first auxiliary transistor being configured to receive a first bias reference voltage, the third terminal of the first auxiliary transistor being coupled to ground; a second auxiliary transistor having a first terminal, a second terminal, and a third terminal, the first terminal of the second auxiliary transistor being configured to receive a second bias reference voltage, the third terminal of the second auxiliary transistor being coupled to the second terminal of the first auxiliary transistor; a third auxiliary transistor having a first terminal, a second terminal, and a third terminal, the first terminal of the third auxiliary transistor being configured to receive a third bias reference voltage, the third terminal of the third auxiliary transistor being coupled to the second terminal of the second auxiliary transistor, the second terminal of the third auxiliary transistor being configured to receive a supply voltage substantially equal to the first output voltage; a second detector configured to measure a second output voltage associated with the third terminal of the second primary transistor; a second comparator configured to compare the measured second output voltage to a second reference voltage associated with the third terminal of the second auxiliary transistor; a second bias supply configured to adjust the second bias voltage provided to the first terminal of the second primary transistor based on the comparison of the measured second output voltage to the second reference voltage; a third detector configured to measure a third output voltage associated with the third terminal of the third primary transistor; a third comparator configured to compare the measured third output voltage to a third reference voltage associated with the third terminal of the third auxiliary transistor; and a third bias supply configured to adjust the third bias voltage provided to the first terminal of the third primary transistor based on the comparison of the measured third output voltage to the third reference voltage. 